IXFA Series 1200V 4.5Ω SMT N-Channel HiPerFET Power Mosfet - TO-263-3
N-Channel 1200V 3A Tc 200W Tc Surface Mount TO-263 IXFA
得捷:
MOSFET N-CH 1200V 3A TO263
艾睿:
Make an effective common gate amplifier using this IXFA3N120 power MOSFET from Ixys Corporation. Its maximum power dissipation is 200000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes hiperfet technology.
Verical:
Trans MOSFET N-CH 1.2KV 3A 3-Pin2+Tab D2PAK
Win Source:
MOSFET N-CH 1200V 3A TO263 / N-Channel 1200 V 3A Tc 200W Tc Surface Mount TO-263 IXFA
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXFA3N120 | IXYS Semiconductor | 下载 |
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| IXFA16N50P | IXYS Semiconductor | 下载 |
| IXFA3N120TRL | IXYS Semiconductor | 下载 |
| IXFA180N10T2 | IXYS Semiconductor | 下载 |
| IXFA130N10T | IXYS Semiconductor | 下载 |
| IXFA8N50P3 | IXYS Semiconductor | 下载 |
| IXFA14N60P3 | IXYS Semiconductor | 下载 |
| IXFA6N120P | IXYS Semiconductor | 下载 |
| IXFA110N15T2 | IXYS Semiconductor | 下载 |
| IXFA7N60P3 | IXYS Semiconductor | 下载 |