FCD9N60NTM

FAIRCHILD SEMICONDUCTOR  FCD9N60NTM  功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V

The is a N-channel SuperFET® high voltage super-junction MOSFET employs a deep Trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp ON-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

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Ultra low gate charge Qg = 17.8nC

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Low effective output capacitance Coss.eff = 122pF

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100% avalanche tested