RF功率MOSFET N沟道增强模式 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
By using a combination of metal-oxide-semiconductor technology, this RF amplifier from can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 250000 mW. Its maximum frequency is 65 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C.
型号 | 品牌 | 下载 |
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ARF460BG | Microsemi 美高森美 | 下载 |
ARF461AG | Microsemi 美高森美 | 下载 |
ARF463BG | Microsemi 美高森美 | 下载 |
ARF463AG | Microsemi 美高森美 | 下载 |
ARF463BP1G | Microsemi 美高森美 | 下载 |
ARF463AP1G | Microsemi 美高森美 | 下载 |
ARF449AG | Microsemi 美高森美 | 下载 |
ARF449BG | Microsemi 美高森美 | 下载 |
ARF460AG | Microsemi 美高森美 | 下载 |
ARF448BG | Microsemi 美高森美 | 下载 |
ARF448AG | Microsemi 美高森美 | 下载 |