1EBN1001AE概述
1EBN1001AE 编带
Summary of Features:
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Single Channel IGBT / MOSFET Gate Driver Booster
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Suitable for IGBT classes up to 650 V / 800A and 1200 V / 400A
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Low propagation delay and minimal PWM distortion
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Separate turn-on and turn-off signals pathes
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Support for negative turn-off bias
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14-pin PG-DSO-14 exposed pad green package
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AEC-Q100 qualified
Benefits:
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Support for active short circuit strategies
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Cost effective implementation of ASIL C/D on system level
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Significant PCB area savings