高压快速开关NPN功率晶体管 High voltage fast-switching NPN power transistor
If you require a general purpose BJT that can handle high voltages, then the NPN BJT, developed by STMicroelectronics, is for you. This bipolar junction transistor"s maximum emitter base voltage is 15 V. Its maximum power dissipation is 100000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 15 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BUL743 | ST Microelectronics 意法半导体 | 下载 |
| BUL770-S | Bourns J.W. Miller 伯恩斯 | 下载 |
| BUL7216 | ST Microelectronics 意法半导体 | 下载 |
| BUL742A | ST Microelectronics 意法半导体 | 下载 |
| BUL741FP | ST Microelectronics 意法半导体 | 下载 |
| BUL742C | ST Microelectronics 意法半导体 | 下载 |
| BUL742 | ST Microelectronics 意法半导体 | 下载 |
| BUL742CFP | ST Microelectronics 意法半导体 | 下载 |
| BUL704 | ST Microelectronics 意法半导体 | 下载 |
| BUL741 | ST Microelectronics 意法半导体 | 下载 |
| BUL705 | ST Microelectronics 意法半导体 | 下载 |