MMUN2113LT1G

ON SEMICONDUCTOR  MMUN2113LT1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率, SOT-23

双电阻器数字 PNP ，

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

欧时:
ON Semiconductor MMUN2113LT1G PNP 数字晶体管, 100 mA, Vce=50 V, 47 kΩ, 电阻比:1, 3引脚 SOT-23封装

得捷:
TRANS PREBIAS PNP 50V SOT23-3

立创商城:
PNP 双极数字晶体管 BRT

e络盟:
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率

艾睿:
Look no further than ON Semiconductor&s;s PNP MMUN2113LT1G digital transistor&s;s, the ideal component to use when designing a digital signal processing unit. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
MMUN2113LT1G PNP Digi Transistor, 100mA50 V 47 kOhm, Ratio Of 1, 3-Pin SOT-23

安富利:
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-23 T/R

富昌:
MMUN 系列 50 V 100 mA 47 kOhm PNP 硅 偏置电阻 晶体管 - SOT-23

Chip1Stop:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R

TME:
Transistor: PNP; bipolar; BRT; 50V; 0.1A; 246mW; SOT23; R1:47kΩ

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SOT-23 T/R

Newark:
# ON SEMICONDUCTOR  MMUN2113LT1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 Ratio, SOT-23

Win Source:
TRANS PREBIAS PNP 0.4W SOT23-3