MOS场效应管/SVF2N60F 管装
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-cell™ structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗2A,600V,RDSontyp.=3.7Ω@VGS=10V
∗ Low gate charge
∗Low Crss
∗Fast switching
∗ Improved dv/dt capability
型号 | 品牌 | 下载 |
---|---|---|
SVF2N60F | Silan 士兰微电子 | 下载 |
SVF2N60M | Silan 士兰微电子 | 下载 |
SVF23-5,08 | Altech | 下载 |
SVF20-3,50 | Altech | 下载 |
SVF20-3,81-K | Altech | 下载 |
SVF20-5,08 | Altech | 下载 |
SVF23-3,50 | Altech | 下载 |
SVF21-3,50 | Altech | 下载 |
SVF20-3,50-K | Altech | 下载 |
SVF21-3,81-K | Altech | 下载 |
SVF24-3,81-K | Altech | 下载 |