FQB30N06LTM

FQB30N06LTM概述

FAIRCHILD SEMICONDUCTOR  FQB30N06LTM  晶体管, MOSFET, N沟道, 32 A, 60 V, 0.027 ohm, 10 V, 2.5 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

.
100% Avalanche tested
.
15nC Typical low gate charge
.
50pF Typical low Crss
FQB30N06LTM数据文档
型号 品牌 下载
FQB30N06LTM

Fairchild 飞兆/仙童

下载
FQB34P10TM

Fairchild 飞兆/仙童

下载
FQB33N10TM

Fairchild 飞兆/仙童

下载
FQB33N10LTM

Fairchild 飞兆/仙童

下载
FQB3N40TM

Fairchild 飞兆/仙童

下载
FQB34N20LTM

Fairchild 飞兆/仙童

下载
FQB34P10TM_F085

Fairchild 飞兆/仙童

下载
FQB3P50TM

Fairchild 飞兆/仙童

下载
FQB3N90TM

Fairchild 飞兆/仙童

下载
FQB3N30TM

Fairchild 飞兆/仙童

下载
FQB32N12V2TM

Fairchild 飞兆/仙童

下载

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司