高速IGBT的沟槽场终止和技术 High speed IGBT in Trench and Fieldstop technology
Summary of Features:
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Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
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Low switching losses for high efficiency
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Excellent V cesat behavior thanks to the famous
TRENCHSTOP™ technology
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Fast switching behavior with low EMI emissions
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Optimized diode for target applications, meaning further improvement in switching losses
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Low gate resistor selection possible down to 5Ω whilst maintaining excellent switching behaviour
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Short circuit capability
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Offering T jmax of 175°C
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Packaged with and without freewheeling diode for increased design freedom
Benefits:
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Excellent cost/performance
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Low switching and conduction losses
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Very good EMI behavior
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A small gate resistor for reduced delay time and voltage overshoot
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Smaller die sizes -> smaller packages
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Best-in-class IGBT efficiency and EMI behavior