高速PT IGBT High Speed PT IGBT
Don"t be afraid to step up the amps in your device when using this IGBT transistor from . It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 337000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT43GA90BD30 | Microsemi 美高森美 | 下载 |
| APT40DC120HJ | Microsemi 美高森美 | 下载 |
| APT40GF120JRDQ2 | Microsemi 美高森美 | 下载 |
| APT40DQ60BG | Microsemi 美高森美 | 下载 |
| APT40DQ120BG | Microsemi 美高森美 | 下载 |
| APT4M120K | Microsemi 美高森美 | 下载 |
| APT4F120K | Microsemi 美高森美 | 下载 |
| APT40DQ60BCTG | Microsemi 美高森美 | 下载 |
| APT45GR65B | Microsemi 美高森美 | 下载 |
| APT44GA60B | Microsemi 美高森美 | 下载 |
| APT43GA90B | Microsemi 美高森美 | 下载 |