CJD200 TR13 PBFREE

CJD200 TR13 PBFREE概述

Trans GP BJT NPN 25V 5A 3Pin2+Tab DPAK T/R

Add switching and amplifying capabilities to your electronic circuit with this NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 8 V. Its maximum power dissipation is 1400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

CJD200 TR13 PBFREE数据文档
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CJD200 TR13 PBFREE

Central Semiconductor

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CJD200 TR13

Central Semiconductor

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