MMBT3906LT1HTSA1

双极晶体管 - 双极结型晶体管BJT AF TRANS GP BJT PNP 40V 0.2A

- 双极 BJT - 单 PNP 250MHz 表面贴装型 PG-SOT23

得捷:
SMALL SIGNAL BIPOLAR TRANSISTOR,

贸泽:
双极晶体管 - 双极结型晶体管BJT AF TRANS GP BJT PNP 40V 0.2A

艾睿:
This specially engineered PNP MMBT3906LT1HTSA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

Chip1Stop:
Trans GP BJT PNP 40V 0.2A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 40V 0.2A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 40V 0.2A SOT-23