SSP6N70A

SSP6N70A概述

先进的功率MOSFET Advanced Power MOSFET

BVDSS = 700 V

RDSon = 1.8 W

ID = 6 A

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25 mA Max. @ VDS = 700V

Low RDSON : 1.552 W Typ.


SSP6N70A数据文档
型号 品牌 下载
SSP6N70A

Fairchild 飞兆/仙童

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