IXDF602SIATR

IXDF602SIATR概述

低边 IGBT MOSFET 灌:2A 拉:2A

低端 栅极驱动器 IC 反相,非反相 8-SOIC


欧时:
IC GATE DRVR LOW-SIDE 8SOIC


得捷:
2A 8 SOIC DUAL INV/NON-INVERTING


立创商城:
低边 IGBT MOSFET 灌:2A 拉:2A


贸泽:
Gate Drivers 2-A Dual Low-Side Ultrafast MOSFET


艾睿:
Drive a high voltage and high current line with a transistor a certain way with this IXDF602SIATR power driver manufactured by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V. This gate driver has an operating temperature range of -40 °C to 125 °C.


Verical:
Driver 2A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC T/R


IXDF602SIATR数据文档
型号 品牌 下载
IXDF602SIATR

IXYS Semiconductor

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IXDF504D1T/R

IXYS Semiconductor

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IXDF604SI

IXYS Semiconductor

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IXDF602SIA

IXYS Semiconductor

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IXDF604SIA

IXYS Semiconductor

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IXDF602D2TR

IXYS Semiconductor

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IXDF604SIATR

IXYS Semiconductor

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IXDF602PI

IXYS Semiconductor

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IXDF604PI

IXYS Semiconductor

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IXDF602SITR

IXYS Semiconductor

下载
IXDF602SI

IXYS Semiconductor

下载

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