IXGT6N170A

Trans IGBT Chip N-CH 1700V 6A 75000mW 3Pin2+Tab TO-268

This IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

得捷:
IGBT 1700V 6A 75W TO268

艾睿:
This IXGT6N170A IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

DeviceMart:
IGBT NPT 1700V 6A TO-268