BFQ67W

NPN 8 GHz宽带晶体管 NPN 8 GHz wideband transistor

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 20V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 15V 集电极连续输出电流ICCollector CurrentIC| 50mA 截止频率fTTranstion FrequencyfT| 8Ghz 直流电流增益hFEDC Current GainhFE| 100 管压降VCE（sat）Collector-Emitter Saturation Voltage| 耗散功率PcPower Dissipation| 300mW/0.3W Description & Applications| NPN 8 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. 描述与应用| NPN8 GHz的宽带 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性 •SOT323信封。 说明 NPN晶体管在一个塑料SOT323信封。它是专为宽带应用，如卫星电视调谐器和射频的便携式通信设备高达2 GHz。