ON SEMICONDUCTOR MJE271G 达林顿双极晶体管
Increase the current gain in your circuit by using "s PNP Darlington transistor. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 500@20mA@3V|1500@120mA@10 V. It has a maximum collector emitter saturation voltage of 2@0.2mA@20mA|3@1.2mA@120mA V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MJE271G | ON Semiconductor 安森美 | 下载 |
| MJE200STU | Fairchild 飞兆/仙童 | 下载 |
| MJE210STU | Fairchild 飞兆/仙童 | 下载 |
| MJE200TSTU | Fairchild 飞兆/仙童 | 下载 |
| MJE200G | ON Semiconductor 安森美 | 下载 |
| MJE210G | ON Semiconductor 安森美 | 下载 |
| MJE2955TTU | Fairchild 飞兆/仙童 | 下载 |
| MJE243 | ON Semiconductor 安森美 | 下载 |
| MJE2955TG | ON Semiconductor 安森美 | 下载 |
| MJE270 | ON Semiconductor 安森美 | 下载 |
| MJE271 | ON Semiconductor 安森美 | 下载 |