STB21NM60ND

STMICROELECTRONICS  STB21NM60ND  功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics

### MOSFET ，STMicroelectronics

得捷:
MOSFET N-CH 600V 17A D2PAK

欧时:
STMicroelectronics FDmesh 系列 Si N沟道 MOSFET STB21NM60ND, 17 A, Vds=600 V, 3引脚 TO-263封装

贸泽:
MOSFET N-channel 600V, 17A FDMesh II

艾睿:
Increase the current or voltage in your circuit with this STB21NM60ND power MOSFET from STMicroelectronics. Its maximum power dissipation is 140000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with fdmesh ii technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R

富昌:
N-Channel 600 V 0.220 Ohm Surface Mount FDmesh™ II Power MosFet - D2PAK

Chip1Stop:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R

TME:
Transistor: N-MOSFET; FDmesh™; unipolar; 600V; 10A; 140W; D2PAK

Verical:
Trans MOSFET N-CH 600V 17A 3-Pin2+Tab D2PAK T/R

Newark:
# STMICROELECTRONICS  STB21NM60ND  Power MOSFET, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V

儒卓力:
**N-CH 650V 17A 220mOhm TO263-3 **

力源芯城:
600V,17A,N沟道MOSFET

DeviceMart:
MOSFET N-CH 600V 17A D2PAK

Win Source:
MOSFET N-CH 600V 17A D2PAK