FS800R07A2E3BOSA2

FS800R07A2E3BOSA2概述

Trans IGBT Module N-CH 650V 700A 1500000mW Automotive 33Pin Tray

Summary of Features:

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Increased blocking voltage capability to 650V
.
High Current Density
.
Low inductive design
.
Low Switching Losses
.
Trench IGBT 3
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Tvj op = 150°C
.
VCEsat with positive Temperature Coefficient
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2.5 kV AC 1min Insulation
.
Direct Cooled Base Plate
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High Power Density
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Integrated NTC temperature sensor
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Isolated Base Plate
.
Copper Base Plate
.
RoHS compilant

Benefits:

.
Cost efficient system approach
.
High efficiency due to low power losses
.
High reliability
.
Compact design
.
HYBRID KIT2 ENH SIL reference design available
.
Very High Power Density
FS800R07A2E3BOSA2数据文档
型号 品牌 下载
FS800R07A2E3BOSA2

Infineon 英飞凌

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FS80-8-DSL8

Panduit 泛达

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FS800R07A2E3B31BOSA1

Infineon 英飞凌

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FS800R07A2E3_B31

Infineon 英飞凌

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FS800R07A2E3

Infineon 英飞凌

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