Trans IGBT Module N-CH 650V 700A 1500000mW Automotive 33Pin Tray
Summary of Features:
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Increased blocking voltage capability to 650V
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High Current Density
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Low inductive design
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Low Switching Losses
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Trench IGBT 3
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Tvj op = 150°C
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VCEsat with positive Temperature Coefficient
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2.5 kV AC 1min Insulation
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Direct Cooled Base Plate
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High Power Density
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Integrated NTC temperature sensor
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Isolated Base Plate
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Copper Base Plate
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RoHS compilant
Benefits:
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Cost efficient system approach
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High efficiency due to low power losses
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High reliability
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Compact design
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HYBRID KIT2 ENH SIL reference design available
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Very High Power Density