Trans IGBT Chip N-CH 900V 60A 3Pin3+Tab TO-3PLH
HIGH POWER SWITCHING APPLICATIONS
Fourth generation IGBT
FRD included between emitter and collector
Enhancement mode type
High speed IGBT: tf= 0.25μs TYP.
FRD : trr= 0.7μs TYP.
Low saturation voltage : VCE sat= 2.1V TYP.
艾睿:
Trans IGBT Chip N-CH 900V 60A 3-Pin3+Tab TO-3PLH
Chip1Stop:
Trans IGBT Chip N-CH 900V 60A 3-Pin3+Tab TO-3PLH
Win Source:
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT