RF功率晶体管， LDMOST塑料家族的N沟道增强模式，横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
This RF amplifier from STMicroelectronics is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 945 MHz. This N channel RF power MOSFET operates in enhancement mode.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD57006STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57002-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060-E | ST Microelectronics 意法半导体 | 下载 |
| PD57070-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57045TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57018STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030S-E | ST Microelectronics 意法半导体 | 下载 |