LdmoST 塑料系列 N沟道 增强模式 射频 功率晶体管
If you"re looking for a MOSFET that is compatible with radio frequency environments, this RF amplifier from STMicroelectronics is for you! Its maximum power dissipation is 4750 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD57002-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57006-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060-E | ST Microelectronics 意法半导体 | 下载 |
| PD57070-E | ST Microelectronics 意法半导体 | 下载 |
| PD57060S-E | ST Microelectronics 意法半导体 | 下载 |
| PD57045TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57018STR-E | ST Microelectronics 意法半导体 | 下载 |
| PD57030S-E | ST Microelectronics 意法半导体 | 下载 |