SI7414DN-T1-E3

SI7414DN-T1-E3概述

VISHAY  SI7414DN-T1-E3  晶体管, MOSFET, N沟道, 5.6 A, 60 V, 0.021 ohm, 10 V, 3 V

The is a TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.

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Reduced total dynamic gate charge Qg
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Fast switching
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PWM optimized for high efficiency
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New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
.
100% Rg tested
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-55 to 150°C Operating temperature range
SI7414DN-T1-E3数据文档
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