Trans GP BJT PNP 60V 10A 3Pin2+Tab TO-3 Sleeve
If you require a general purpose BJT that can handle high voltages, then the PNP BJT, developed by , is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N3789 PBFREE | Central Semiconductor | 下载 |
| 2N3771 | ST Microelectronics 意法半导体 | 下载 |
| 2N3700 | ST Microelectronics 意法半导体 | 下载 |
| 2N3771G | ON Semiconductor 安森美 | 下载 |
| 2N3763 | Central Semiconductor | 下载 |
| 2N3772 | ST Microelectronics 意法半导体 | 下载 |
| 2N3773 | ST Microelectronics 意法半导体 | 下载 |
| 2N3773G | ON Semiconductor 安森美 | 下载 |
| 2N3772G | ON Semiconductor 安森美 | 下载 |
| 2N3789 | Central Semiconductor | 下载 |
| 2N3716 | Central Semiconductor | 下载 |