Power Bipolar Transistor, 10A IC, 80V VBRCEO, 1Element, NPN, Silicon, TO-3, Metal, 2Pin, TO-3, 2Pin
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N3716 | Central Semiconductor | 下载 |
| 2N3771 | ST Microelectronics 意法半导体 | 下载 |
| 2N3700 | ST Microelectronics 意法半导体 | 下载 |
| 2N3771G | ON Semiconductor 安森美 | 下载 |
| 2N3763 | Central Semiconductor | 下载 |
| 2N3772 | ST Microelectronics 意法半导体 | 下载 |
| 2N3773 | ST Microelectronics 意法半导体 | 下载 |
| 2N3773G | ON Semiconductor 安森美 | 下载 |
| 2N3772G | ON Semiconductor 安森美 | 下载 |
| 2N3789 | Central Semiconductor | 下载 |
| 2N3740 | Central Semiconductor | 下载 |