SI1022R-T1-GE3

VISHAY  SI1022R-T1-GE3  晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V

The is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.

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2000V Gate-source ESD protected

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Low ON-resistance

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Low threshold

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25ns Fast switching speed

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30pF Low input capacitance

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Low input and output leakage

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Miniature package

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Halogen-free

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Low offset voltage

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Low-voltage operation

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High-speed circuits

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Low error voltage

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Small board area