SMMBT2222AWT1G

双极晶体管 - 双极结型晶体管BJT SS GP XSTR NPN 40V

- 双极 BJT - 单 NPN 40 V 600 mA 300MHz 150 mW 表面贴装型 SC-70-3（SOT323）

得捷:
TRANS NPN 40V 0.6A SC70-3

立创商城:
SMMBT2222AWT1G

贸泽:
双极晶体管 - 双极结型晶体管BJT SS GP XSTR NPN 40V

艾睿:
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN SMMBT2222AWT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SC-70 T/R