STW10NK60Z

STMICROELECTRONICS  STW10NK60Z  功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V

N 通道 MDmesh™ SuperMESH™，250V 至 650V，STMicroelectronics

### MOSFET ，STMicroelectronics

得捷:
MOSFET N-CH 600V 10A TO247-3

立创商城:
N沟道 600V 10A

欧时:
STMicroelectronics MDmesh, SuperMESH 系列 Si N沟道 MOSFET STW10NK60Z, 10 A, Vds=600 V, 3引脚 TO-247封装

贸泽:
MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH

e络盟:
功率场效应管, MOSFET, N沟道, 600 V, 10 A, 0.65 ohm, TO-247, 通孔

艾睿:
Compared to traditional transistors, STW10NK60Z power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 156000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with supermesh technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 10A 3-Pin3+Tab TO-247 Tube

TME:
Transistor: N-MOSFET; unipolar; 600V; 5.7A; 156W; TO247-3

Verical:
Trans MOSFET N-CH 600V 10A 3-Pin3+Tab TO-247 Tube

Newark:
# STMICROELECTRONICS  STW10NK60Z  Power MOSFET, N Channel, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V

DeviceMart:
MOSFET N-CH 600V 10A TO-247

Win Source:
MOSFET N-CH 600V 10A TO-247