A2I09VD030GNR1

AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 575-960MHz, 4W AVG., 48V

Overview

The A2I09VD030N wideband integrated circuit is designed with on-chip matching that makes it usable from 575 to 960 MHz. This multi-stage structure is rated for 48 to 55 V operation and covers all typical cellular base station modulation formats.

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## Features

* On-chip matching 50 ohm input, DC blocked

* Integrated quiescent current temperature compensation with enable/disable function

* Designed for digital predistortion error correction systems

* Optimized for Doherty applications

* RoHS compliant

## Features RF Performance Tables

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1A+B = 46 mA, IDQ2A+B = 154 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **PAE

%

.

* | **ACPR

dBc

.

*

\---|---|---|---

920 MHz| 34.4| 19.9| –45.0

940 MHz| 34.5| 20.0| –44.6

960 MHz| 34.3| 19.8| –44.3

### 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ1A+B = 50 mA, IDQ2A+B = 150 mA, Pout = 4 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **PAE

%

.

* | **ACPR

dBc

.

*

\---|---|---|---

728 MHz| 30.9| 19.6| –44.7

748 MHz| 31.1| 19.5| –45.5

768 MHz| 31.2| 19.3| –46.2