NXP PBSS303NZ 单晶体管 双极, NPN, 30 V, 130 MHz, 2 W, 5.5 A, 250 hFE
The is a 5.5A NPN breakthrough-in small signal BISS Transistor in a surface-mount plastic package with increased heat-sink.
-
.
-
Low collector-emitter saturation voltage VCEsat
-
.
-
High collector current capability IC and ICM
-
.
-
High collector current gain hFE at high IC
-
.
-
High efficiency due to less heat generation
-
.
-
Smaller required printed-circuit board PCB area than for conventional transistors
-
.
-
PNP complement is PBSS303PZ
-
.
-
S303NZ Marking code