功率半导体功率模块射频功率MOSFET Power Semiconductors Power Modules RF Power MOSFETs
The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT40GR120B2D30 | Microsemi 美高森美 | 下载 |
| APT40DC120HJ | Microsemi 美高森美 | 下载 |
| APT40GF120JRDQ2 | Microsemi 美高森美 | 下载 |
| APT40DQ60BG | Microsemi 美高森美 | 下载 |
| APT40DQ120BG | Microsemi 美高森美 | 下载 |
| APT4M120K | Microsemi 美高森美 | 下载 |
| APT4F120K | Microsemi 美高森美 | 下载 |
| APT40DQ60BCTG | Microsemi 美高森美 | 下载 |
| APT45GR65B | Microsemi 美高森美 | 下载 |
| APT44GA60B | Microsemi 美高森美 | 下载 |
| APT43GA90B | Microsemi 美高森美 | 下载 |