300V N沟道MOSFET 300V N-Channel MOSFET
Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features
• 14A, 300V, RDSon = 0.29Ω @VGS = 10 V
• Low gate charge typical 18 nC
• Low Crss typical 17 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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