FQN1N60CTA

FAIRCHILD SEMICONDUCTOR  FQN1N60CTA  功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 9.3 ohm, 10 V, 4 V

The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

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Low gate charge 4.8nC

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Low Crss 3.5pF

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100% avalanche tested