600V N沟道MOSFET 600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Features
• 2.0A, 600V, RDSon= 3.6Ω@VGS= 10 V
• Low gate charge typical 10 nC
• Low Crss typical 5.5 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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|---|---|---|
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