BC849BE6327HTSA1

SOT-23 NPN 30V 0.1A

- 双极 BJT - 单 NPN 30 V 100 mA 250MHz 330 mW 表面贴装型 SOT-23-3

得捷:
TRANS NPN 30V 0.1A SOT23

艾睿:
Add switching and amplifying capabilities to your electronic circuit with this NPN BC849BE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.

Verical:
Trans GP BJT NPN 30V 0.1A 330mW Automotive 3-Pin SOT-23 T/R