SUP75P03-07-E3

SUP75P03-07-E3概述

VISHAY  SUP75P03-07-E3  晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V

The from Vishay is a through hole, 30V P channel MOSFET in TO-220AB package.

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Drain to source voltage Vds of -30V
.
Gate to source voltage of ±20V
.
Continuous drain current Id of -75A
.
Power dissipation Pd of 187W
.
Low on state resistance of 8mohm at Vgs -4.5V
.
Operating junction temperature range from -55°C to 175°C
SUP75P03-07-E3数据文档
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