FQP17P06

FAIRCHILD SEMICONDUCTOR  FQP17P06  晶体管, MOSFET, P沟道, 17 A, -60 V, 120 mohm, -10 V, -4 V

The is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.

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Low gate charge

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100% Avalanche tested

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Improved system reliability in PFC and soft switching topologies

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Switching loss improvements

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Lower conduction loss

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175°C Maximum junction temperature rating