N沟道,55V,29A,40mΩ@10V
Description
Fifth Generation HEXFETs from utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
l Advanced Process Technology
l Surface Mount IRFZ34NS
l Low-profile through-hole IRFZ34NL
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
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|---|---|---|
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