STB8NM60T4

STB8NM60T4概述

STMICROELECTRONICS  STB8NM60T4  功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.9 ohm, 10 V, 4 V

The is a MDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company"s PowerMESH™ horizontal layout. The resulting product has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics. The adoption of the company"s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition"s products.

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100% Avalanche tested
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High dV/dt and avalanche capabilities
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Low gate input resistance
STB8NM60T4数据文档
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