IPD30N10S3L34ATMA1

INFINEON  IPD30N10S3L34ATMA1  晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V

OptiMOS™T 功率 MOSFET

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

N 通道 - 增强模式

符合汽车 AEC Q101 规格

MSL1 高达 260°C 峰值回流焊接

175°C 工作温度

绿色产品（符合 RoHS 标准）

欧时:
Infineon OptiMOS T 系列 Si N沟道 MOSFET IPD30N10S3L34ATMA1, 30 A, Vds=100 V, 3引脚 DPAK TO-252封装

得捷:
MOSFET N-CH 100V 30A TO252-3

立创商城:
N沟道 100V 30A

贸泽:
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T

艾睿:
As an alternative to traditional transistors, the IPD30N10S3L34ATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 57000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans MOSFET N-CH 100V 30A 3-Pin2+Tab TO-252

Verical:
Trans MOSFET N-CH 100V 30A Automotive 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON  IPD30N10S3L34ATMA1  MOSFET Transistor, N Channel, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V

Win Source:
MOSFET N-CH 100V 30A TO252-3 / N-Channel 100 V 30A Tc 57W Tc Surface Mount PG-TO252-3-11