BC848BLT3G

通用晶体管 General Purpose Transistors

- 双极 BJT - 单 NPN 30 V 100 mA 100MHz 300 mW 表面贴装型 SOT-23-3（TO-236）

得捷:
TRANS NPN 30V 0.1A SOT23-3

立创商城:
BC848BLT3G

贸泽:
双极晶体管 - 双极结型晶体管BJT 100mA 30V NPN

艾睿:
Implement this versatile NPN BC848BLT3G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT NPN 30V 0.1A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT NPN 30V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 30V 0.1A Automotive 3-Pin SOT-23 T/R

Newark:
Bipolar BJT Single Transistor, NPN, 30 V, 100 MHz, 225 mW, 100 mA, 290 hFE

Win Source:
TRANS NPN 30V 0.1A SOT-23