SIR172DP-T1-GE3数据手册PDF_SIR172DP-T1-GE3中文资料-锐单商城

SIR172DP-T1-GE3概述

VISHAY SIR172DP-T1-GE3 晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0074 ohm, 10 V, 2.5 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high-side switch applications.

.: Low thermal resistance PowerPAK® package with small size and low 1.07mm profile

.: Optimized for high-side synchronous rectifier operation

.: 100% Rg tested

.: 100% UIS tested

.: Halogen-free

.: -55 to 150°C Operating temperature range

SIR172DP-T1-GE3详细参数

SIR172DP-T1-GE3数据文档

型号	品牌	下载
SIR172DP-T1-GE3	Vishay Semiconductor 威世	下载
SIR19-21C/TR8	Everlight Electronics 亿光	下载
SIR12-21C/TR8	Everlight Electronics 亿光	下载
SIR19-315/TR8	Everlight Electronics 亿光	下载
SIR164DP-T1-GE3	Vishay Semiconductor 威世	下载
SIR158DP-T1-GE3	Vishay Semiconductor 威世	下载
SIR172ADP-T1-GE3	Vishay Semiconductor 威世	下载
SIR168DP-T1-GE3	Vishay Semiconductor 威世	下载
SIR1-03-L-S-K-TR	Samtec 申泰电子	下载
SIR1-10-L-S-TR	Samtec 申泰电子	下载
SIR1-05-L-S-K-TR	Samtec 申泰电子	下载