FDD8896

FAIRCHILD SEMICONDUCTOR  FDD8896  晶体管, MOSFET, N沟道, 94 A, 30 V, 0.0047 ohm, 10 V, 2.5 V

最大源漏极电压Vds Drain-Source Voltage| 30V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 9.4A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.0057Ω/Ohm @3.5A,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1.2-2.5V 耗散功率Pd Power Dissipation| 80W Description & Applications| N-Channel PowerTrench ®MOSFET 30V, 94A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDSON and fast switching speed. Features • rDSON = 5.7mW, VGS = 10V, ID = 35A • rDSON= 6.8mW, VGS = 4.5V, ID = 35A • High performance trench technology for extremely low DSON • Low gate charge • High power and current handling capability 描述与应用| N-沟道PowerTrench®MOSFET 30V，94A，5.7mΩ 概述 这N沟道MOSFET已专门设计 提高整体效率的DC / DC转换器 同步或传统开关PWM 控制器。它已被优化的低门电荷，低 RDS（ON）和快速开关速度。 •高性能沟道技术极低 DS（ON） •低栅极电荷 •高功率和电流处理能力