TOSHIBA GT50J325 单晶体管, IGBT, 50 A, 2.45 V, 240 W, 600 V, TO-3P, 3 引脚
The from is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.
-
.
-
Fourth generation IGBT
-
.
-
Enhancement mode type
-
.
-
Fast switching
-
.
-
Operating frequency up to 50KHz
-
.
-
Maximum collector emitter saturation voltage of 2.45V
-
.
-
FRD included between emitter and collector
-
.
-
Collector emitter voltage VCES of 600V
-
.
-
DC collector current of 50A
-
.
-
Junction temperature of 150°C
-
.
-
Collector power dissipation of 240W