DDTD113EC-7-F

DDTD113EC-7-F概述

Trans Digital BJT NPN 40V 500mA 200mW Automotive 3Pin SOT-23 T/R

- 双极 BJT - 单,预偏置 NPN - 预偏压 50 V 500 mA 200 MHz 200 mW 表面贴装型 SOT-23-3


得捷:
TRANS PREBIAS NPN 200MW SOT23-3


立创商城:
DDTD113EC-7-F


艾睿:
Are you looking to build a digital signal processing device? The NPN DDTD113EC-7-F digital transistor, developed by Diodes Zetex, can provide a solution. This product&s;s maximum continuous DC collector current is 500 mA, while its minimum DC current gain is 33@50mA@5 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


安富利:
Trans Digital BJT NPN 500mA 3-Pin SOT-23 T/R


Chip1Stop:
Trans Digital BJT NPN 500mA 3-Pin SOT-23 T/R


Verical:
Trans Digital BJT NPN 50V 500mA Automotive 3-Pin SOT-23 T/R


Win Source:
TRANS PREBIAS NPN 200MW SOT23-3


DDTD113EC-7-F数据文档
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