TP0101K-T1-E3

VISHAY  TP0101K-T1-E3  晶体管, MOSFET, P沟道, -580 mA, -20 V, 420 mohm, -4.5 V, 700 mV

Summary of Performance:

The TP0101Kis a technology upgrade withESD protection to the original TP0101T. The ESD protection diodes onthe gate increases Gate-Body Leakage; otherwise, there is little variation regarding performance.

e络盟:
VISHAY  TP0101K-T1-E3  晶体管, MOSFET, P沟道, -580 mA, -20 V, 420 mohm, -4.5 V, 700 mV

艾睿:
Trans MOSFET P-CH 20V 0.58A 3-Pin SOT-23 T/R

Chip1Stop:
Trans MOSFET P-CH 20V 0.58A 3-Pin SOT-23 T/R