Trans GP BJT NPN 350V 8A 3Pin2+Tab TO-3
Design various electronic circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 8 V. Its maximum power dissipation is 125000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 8 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| JANTX2N6308 | Microsemi 美高森美 | 下载 |
| JANTX2N2905A | Microsemi 美高森美 | 下载 |
| JANTX2N2907AUA | Microsemi 美高森美 | 下载 |
| JANTX2N2920 | Microsemi 美高森美 | 下载 |
| JANTX1N5305-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019 | Microsemi 美高森美 | 下载 |
| JANTX1N5310-1 | Microsemi 美高森美 | 下载 |
| JANTX2N3019S | Microsemi 美高森美 | 下载 |
| JANTX1N5314-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5312UR-1 | Microsemi 美高森美 | 下载 |
| JANTX1N5314UR-1 | Microsemi 美高森美 | 下载 |