FQB19N20LTM

FQB19N20LTM概述

FAIRCHILD SEMICONDUCTOR  FQB19N20LTM  晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V

The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.

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100% Avalanche tested
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31nC Typical low gate charge
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30pF Typical low Crss
FQB19N20LTM数据文档
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