PMF280UN,115

NXP  PMF280UN,115  晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV

The is a N-channel enhancement-mode ultra-low level FET in a plastic package using TrenchMOS® technology. It is suitable for use in driver circuits and switching in portable appliances applications.

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Surface-mount package

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Footprint 40% smaller than SOT23

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Low ON-state resistance

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Low threshold voltage

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-55 to 150°C Junction temperature range