IXTP52P10P

IXTP52P10P概述

P沟道 100V 52A

P-Channel 100V 52A Tc 300W Tc Through Hole TO-220AB


得捷:
MOSFET P-CH 100V 52A TO220AB


立创商城:
P沟道 100V 52A


艾睿:
Create an effective common drain amplifier using this IXTP52P10P power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.


Verical:
Trans MOSFET P-CH 100V 52A 3-Pin3+Tab TO-220


IXTP52P10P数据文档
型号 品牌 下载
IXTP52P10P

IXYS Semiconductor

下载
IXTP160N075T

IXYS Semiconductor

下载
IXTP44P15T

IXYS Semiconductor

下载
IXTP102N15T

IXYS Semiconductor

下载
IXTP90N055T

IXYS Semiconductor

下载
IXTP220N055T

IXYS Semiconductor

下载
IXTP152N085T

IXYS Semiconductor

下载
IXTP200N085T

IXYS Semiconductor

下载
IXTP76N075T

IXYS Semiconductor

下载
IXTP98N075T

IXYS Semiconductor

下载
IXTP70N085T

IXYS Semiconductor

下载

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